| PART |
Description |
Maker |
| C3D04060A |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC TO-220, 2 PIN
|
Cree, Inc.
|
| C3D04060E |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252 TO-252, 3 PIN
|
Cree, Inc.
|
| STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| SHD618052AN SHD618052AP SHD618052BP SHD618052P SHD |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| EFM301L EFM302L EFM303L EFM304L EFM305L EFM306L EF |
3 A, 150 V, SILICON, RECTIFIER DIODE
3 A, 600 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere
3 A, 200 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
|
